A high supply voltage bandgap reference circuit using drain-extended MOS devices

A bandgap reference circuit that uses high-voltage drainextended MOS (DeMOS) devices is presented for high supply voltage application without using a voltage regulator for the bandgap core circuit. The bandgap reference circuit was fabricated using commercially available 0.18μm high-voltage DeMOS technology. Measurement result of the chip shows that the reference voltage change rate for VDD variation from 5V to 30V and for the temperature variation from −40◦C to +140◦C were 1.16mV/V and 0.84mV/◦C, respectively. The measured reference voltage with the supply voltage of 15V at room temperature was 2.487V. The current consumption and the active area were 3.2μA and 320× 345μm2, respectively.